Fabrikasi dan karakterisasi lapisan I, P dan N A-µC-Si:H yang dideposisi dalam reaktor PECVD tunggal pada frekuensi 70 Mhz

Atmadi, Aufridus (1998) Fabrikasi dan karakterisasi lapisan I, P dan N A-µC-Si:H yang dideposisi dalam reaktor PECVD tunggal pada frekuensi 70 Mhz. Masters thesis, Institut Teknologi Bandung.

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Item Type: Thesis (Masters)
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Technology > Departement of Physics
Depositing User: Y. Etik Supriyanti
Date Deposited: 16 Feb 2016 08:28
Last Modified: 16 Feb 2016 08:28
URI: http://repository.usd.ac.id/id/eprint/2982

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